Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field

被引:0
|
作者
Farajian, AA [1 ]
Mizuseki, H [1 ]
Kawazoe, Y [1 ]
机构
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
carbon nanotubes; doped nanotube junctions; spin-polarized transport; current-voltage characteristics; negative differential resistance (NDR);
D O I
10.1117/12.514540
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The effects of different spin orientations on transport through carbon nanotubes are studied, using a simple tight-binding model within the mean-field approximation. It turns out that, in the absence of external magnetic field, the mean-field ground states of both semiconducting and metallic nanotubes are antiferromagnetic. As regards electronic/transport properties, it is observed that the conductance characteristics of spin-up and spin-down carriers are separated, and a negative differential resistance (NDR) feature in the I-V characteristics is detected, when the system is subjected to external magnetic field. NDR is particularly interesting for a wide range of applications.
引用
收藏
页码:472 / 474
页数:3
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