Current bistability in resonant tunneling through a semiconductor quantum dot

被引：1

作者：

Natori, K ^{[1
]}

Sano, N ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 305, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 06期

关键词：

quantum dot; resonant tunneling; bistability;

D O I：

10.1006/spmi.1996.0348

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We discuss resonant tunneling through quantum dot energy levels considering the charging energy of the dot. The hamiltonian of the system is reduced to a form of the Anderson hamiltonian of resonant tunneling. The mean-field approximation is applied and current-voltage characteristics are evaluated. The self-consistent solution is investigated for the low tunneling rate case in the low-temperature condition. The current bistability and the related current hysteresis are pointed out. The Coulomb staircase is shown in the current-voltage characteristics. These features are all due to Coulomb repulsion within the dot. (C) 1998 Academic Press Limited.

引用

页码：1339 / 1342

页数：4

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