Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors

被引：3
|
作者：
Notargiacomo, A. [1 ]
Bagni, R. [2 ]
Giovine, E. [1 ]
Foglietti, V. [1 ]
Carta, S. [1 ]
Pea, M. [2 ]
Di Gaspare, L. [2 ]
Capellini, G. [2 ]
Evangelisti, F. [2 ]
机构：
[1] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy
[2] Univ Roma TRE, Phys Dept E Amaldi, I-00146 Rome, Italy
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 08期
关键词：
Air-bridge technology; Epitaxial germanium; Reactive ion etching; Schottky diode; Infrared detector;
D O I：
10.1016/j.mee.2010.11.046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication process of suspended anodes implemented in Schottky-diode devices on epitaxial Ge. An air-bridge technique based on reactive ion etching in SF6 was developed in order to release the Schottky contact bridge, ensuring higher control respect to wet etching. Metal-semiconductor junctions in the sub-micron range with rectifying behaviour have been obtained. The present fabrication process can be extended as is to the use of silicon on insulator substrates. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2714 / 2716
页数：3
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