Single wafer wet cleaning based on short cycle time, ambient temperature and a small amount of chemical

被引:0
|
作者
Sano, K [1 ]
Izumi, A [1 ]
机构
[1] Dainippon Screen Mfg Co Ltd, Fushimi Ku, Kyoto 6128486, Japan
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
For recent further requirements, a short cycle time, reductions of oxide loss and chemical consumption are required for wet cleaning. We found that a two-step process, SC-1 10 sec --> HF/HCI 10 sec, could improve metal removal efficiency in comparison with one-step processes. In order to improve particle removal efficiency., the two-fluid spray, Nanospray(TM), was employed on the first SC-1 step of the two-step process. In addition, the Nanospray(TM) also achieved low chemical consumption. In this study, we have demonstrated that the two-step cleaning process has the features of a short cycle time, small oxide loss and low chemical consumption for single wafer cleaning.
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页码:34 / 41
页数:8
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