Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

被引：7
|
作者：
Martini, S
Quivy, AA
Ugarte, D
Lange, C
Richter, W
Tokranov, VE
机构：
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Lab Nac Luz Sincrotron, BR-13083970 Campinas, SP, Brazil
[3] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany
[4] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
photoluminescence; transmission electron microscopy; vicinal surfaces;
D O I：
10.1016/S0022-0248(01)00630-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In the present work, we investigated the influence of step bunching on the optical properties of InGaAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements showed a larger full width at half maximum (FWHM) of the emission coming from the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：46 / 50
页数：5
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