High-performance edge-suspended spiral inductors and CPWs on CMOS-grade silicon substrates

被引:0
|
作者
Zhang, JW [1 ]
Hon, WC [1 ]
Leung, LLW [1 ]
Chen, KJ [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China
关键词
edge-suspended structures; inductors; coplanar waveguide; current crowding; proximity effect; micromachining;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports high performance edge-suspended passive components realized by CMOS-compatible micromachining. The operation principle is described in detail. Edge-suspended inductors (ESIs) and CPWs (ESCPWs) are fabricated using a combination of deep dry etching and anisotropic wet etching techniques. For a three-turn 4.5-nH inductor, a 70% increase (from 6.8 to 11.7) in maximum Q-factor and a 57% increase (from 9.1 GHz to 14.3 GHz) in self-resonance frequency are obtained with a 11 mum suspended edge in 25 mum wide lines. A 50 Omega CPW exhibits a reduction in insertion loss, from 2.4dB/mm to 0.4dB/mm at 39 GHz.
引用
收藏
页码:586 / 589
页数:4
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