2D van der Waals Heterojunction of Organic and Inorganic Monolayers for High Responsivity Phototransistors

被引:32
|
作者
Zhao, Baolin [1 ]
Gan, Ziyang [2 ,3 ]
Johnson, Manuel [4 ]
Najafidehaghani, Emad [2 ,3 ]
Rejek, Tobias [1 ]
George, Antony [2 ,3 ]
Fink, Rainer H. [4 ]
Turchanin, Andrey [2 ,3 ]
Halik, Marcus [1 ]
机构
[1] Friedrich Alexander Univ Erlangen Nurnberg FAU, Interdisziplinaren Zentrums Nanostrukturierte Fil, Inst Polymer Mat, Organ Mat & Devices OMD, Cauerstr 3, D-91058 Erlangen, Germany
[2] Friedrich Schiller Univ Jena, Inst Phys Chem, Lessingstr 10, D-07743 Jena, Germany
[3] Friedrich Schiller Univ Jena, Abbe Ctr Photon, Lessingstr 10, D-07743 Jena, Germany
[4] Friedrich Alexander Univ Erlangen NOrnberg FAU, Phys Chem 2, Egerlandstr 3, D-91058 Erlangen, Germany
基金
欧盟地平线“2020”;
关键词
charge transfer; organic-inorganic hybrid; photodetection; self-assembled monolayer; transition metal dichalcogenides; van der Waals heterojunction; FIELD-EFFECT TRANSISTORS; TRANSITION; AMBIPOLAR; HETEROSTRUCTURES; PHOTODETECTION; TRANSPORT; DISORDER;
D O I
10.1002/adfm.202105444
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Van der Waals (vdW) heterostructures composing of organic molecules with inorganic 2D crystals open the door to fabricate various promising hybrid devices. Here, a fully ordered organic self-assembled monolayer (SAM) to construct hybrid organic-inorganic vdW heterojunction phototransistors for highly sensitive light detection is used. The heterojunctions, formed by layering MoS2 monolayer crystals onto organic [12-(benzo[b]benzo[4,5]thieno[2,3-d]thiophen-2-yl)dodecyl)]phosphonic acid SAM, are characterized by Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy. Remarkably, this vdW heterojunction transistor exhibits a superior photoresponsivity of 475 A W-1 and enhanced external quantum efficiency of 1.45 x 10(5)%, as well as an extremely low dark photocurrent in the pA range. This work demonstrates that hybridizing SAM with 2D materials can be a promising strategy for fabricating diversified optoelectronic devices with unique properties.
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页数:7
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