High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

被引：0
|
作者：
Xu, Peng [1 ]
Cheng, Zhiqun [1 ]
Zhang, ZhiWei [1 ]
Meng, MingWen [1 ]
机构：
[1] Hangzhou Dianzi Univ, Educ Minist, Key Lab RF Circuit & Syst, Hangzhou, Peoples R China
来源：
2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020) | 2020年
关键词：
E-band; MMIC; GaN; HEMT; power amplifier(PA);
D O I：
10.1109/icicm50929.2020.9292182
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21-23dB and power added efficiency(PAE) of 25.5%-27.5% in the E-band low frequency (71-76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.
引用
收藏
页码：130 / 133
页数：4
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