Effect of carrier dynamics on quantum-dot laser performance

被引：1
|
作者：
Sugawara, M [1 ]
机构：
[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
来源：
1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ICIPRM.1998.712450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The purpose of this work is to study the effect of carrier dynamics on quantum-dot laser performance. The simulation using carrier - photon rate equations clarifies criteria on the carrier relaxation lifetime as well as the inhomogeneous broadening linewidth and the crystal quality to achieve high-performance. The relaxation lifetime forms a hierarchy in quantum-dot lasers, i.e., what performance we can expect strongly depends on the relaxaion lifetime.
引用
收藏
页码：254 / 257
页数：4
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