Photoluminescence of p-type CdS: Cu thin films

被引：19
|
作者：
Kato, H [1 ]
Sato, J [1 ]
Abe, T [1 ]
Kashiwaba, Y [1 ]
机构：
[1] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
来源：
11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS | 2004年 / 1卷 / 04期
关键词：
D O I：
10.1002/pssc.200304152
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu-doped p-type CdS (CdS: Cu) and non-doped n-type CdS films were fabricated by the vacuum deposition process. Photoluminescence (PL) spectra of CdS: Cu and CdS films were measured between 8.7 K and room temperature. Free excitonic emission (FX), neutral acceptor-bound excitonic emission (I-1), and donor-acceptor pair emission (DAP) were observed from CdS:Cu films. These results suggest that crystallinity of CdS films was improved by Cu doping and that Cu atoms in CdS behave as acceptors and form shallow levels (about 80 meV above the valence band edge) in CdS.
引用
收藏
页码：653 / 656
页数：4
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