A low energy plasma flood gun using RF plasma formation

被引：0

作者：

Sakai, S ^{[1
]}

Hamamoto, N ^{[1
]}

Ikejiri, T ^{[1
]}

Tanjyo, M ^{[1
]}

机构：

[1] Nissin Ion Equipment Co Ltd, Engn & Prod Dept, R&D Grp, Minami Ku, Kyoto 6018205, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A plasma flood gun (PFG) system useful for 300 mm wafer has been developed by using an RF plasma for the medium-current implanter EXCEED2300. To produce low energy electrons, the electron energy is filtered by magnetic fields. To eliminate dose shift, a low flow rate of Xe gas is adopted. A linear geometry of the plasma production source chamber improves the spatial uniformity of the plasma flooding across the 300 mm wafer. The metal contamination and the maintenance time are also greatly improved with the RF plasma formation.

引用

页码：592 / 595

页数：4

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