Electronic and optical properties of boron nitride nanotubes

被引：29
|
作者：
Oku, Takeo [1 ]
Koi, Naruhiro [2 ]
Suganuma, Katsuaki [2 ]
机构：
[1] Univ Shiga Prefecture, Dept Mat Sci, Shiga 5228533, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 5-6期
关键词：
nanostructures; chemical synthesis; scanning tunneling microscopy; electronic structure;
D O I：
10.1016/j.jpcs.2007.10.116
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Boron nitride (BN) nanotubes were fabricated, and their electronic and optical properties were investigated by scanning tunneling microscopy (STM) and optical absorption at room temperature. STM images showed atomic arrangements of BN nanotubes, and its chirality was directly observed. The current-voltage characteristics of the BN nanotubes showed onset voltage at 5.0 V, and the optical absorption spectrum of BN nanotubes showed a peak at 4.8 eV. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1228 / 1231
页数：4
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