Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method

被引：7
|
作者：
Tong, Bayingaerdi [1 ]
Ichimura, Masaya [1 ]
机构：
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 09期
关键词：
CHEMICAL BATH DEPOSITION; ELECTRICAL-CONDUCTION; TRANSPARENT; FABRICATION; ZNS; CELLS; OXIDE;
D O I：
10.7567/JJAP.55.098004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Zn-rich CuxZnyS is a transparent p-type semiconductor. We prepared CuxZnyS thin films by the photochemical deposition method and investigated changes in their properties due to annealing. The sample before annealing was amorphous, and its composition was Cu : Zn : S : O = 0: 04 : 0: 51 : 0: 31 : 0: 14. The band gap was estimated to be about 3.5 eV by optical transmission measurement. P-type conductivity was confirmed by the photoelectrochemical measurement. After annealing at 400 degrees C for 1 h, the formation of the ZnS phase was observed by X-ray diffraction measurement. Although the band gap did not change significantly, the conduction type became close to intrinsic. (C) 2016 The Japan Society of Applied Physics
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页数：3
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