Ultrathin Ta2O5 film capacitor with Ru bottom electrode

被引：39
|
作者：
Aoyama, T [1 ]
Yamazaki, S [1 ]
Imai, K [1 ]
机构：
[1] Toshiba Corp, Microelect Engn Lab, USLI Proc Engn Lab, Yokohama, Kanagawa 2358522, Japan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 08期
关键词：
D O I：
10.1149/1.1838745
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The characteristics of the ultrathin Ta2O5 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n(+)-Si by sputtering in 10% O-2/Ar ambient, for the bottom electrode, and Ta2O5 films are deposited by chemical vapor deposition using Ta(OC2H5)(5) and O-2. By O-2 plasma treatment at 400 degrees C after N-2 thermal treatment at 700 degrees C, excellent properties, are obtained such that the effective SiO2 film thickness is 0.68 nm for 6 nm thick Ta2O5 film and the leakage current is less than 1 x 10(-8) A/cm(2) between the range of -2.1 and +1.8 V. The Ta2O5 film with a Ru bottom electrode is one of the most suitable structures for Gbit dynamic random access memory capacitors.
引用
收藏
页码：2961 / 2964
页数：4
相关论文
共 50 条
  • [1] Extendibility of Ta2O5 metal-insulator-metal capacitor using Ru electrode
    Tsuzumitani, A
    Okuno, Y
    Shibata, J
    Shimizu, T
    Yamamoto, K
    Mori, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2073 - 2077
  • [2] Extendibility of Ta2O5 metal-insulator-metal capacitor using Ru electrode
    Tsuzumitani, Akihiko
    Okuno, Yasutoshi
    Shibata, Jun
    Shimizu, Tadami
    Yamamoto, Kazuhiko
    Mori, Yoshihiro
    [J]. 2000, JJAP, Tokyo, Japan (39):
  • [3] Electrical properties of crystalline Ta2O5 with Ru electrode
    Kim, JW
    Nam, SD
    Lee, SH
    Won, SJ
    Kim, WD
    Yoo, CY
    Park, YW
    Lee, SI
    Lee, MY
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2094 - 2097
  • [4] Backend process for cylindrical Ru/Ta2O5/Ru capacitor for future DRAM
    Lin, J
    Suzuki, T
    Minakata, H
    Shimada, A
    Tsunoda, K
    Fukuda, M
    Kurahashi, T
    Fukuzumi, Y
    Hatada, A
    Sato, A
    Sun, PH
    Ishibashi, Y
    Tomita, H
    Nishikawa, N
    Ito, E
    Liu, WC
    Chu, CM
    Suzuki, R
    Nakabayashi, M
    Matsunaga, D
    Hieda, K
    Hashimoto, K
    Nakamura, S
    Kohyama, Y
    Shiah, CM
    [J]. SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 183 - 188
  • [5] Preparation and properties of Ta2O5 film capacitors using TiSi2 bottom electrode
    H. -S. Yang
    Y. S. Choi
    S. M. Cho
    [J]. Journal of Electronic Materials, 1999, 28 : 1414 - 1419
  • [6] Preparation and properties of Ta2O5 film capacitors using TiSi2 bottom electrode
    Yang, HS
    Choi, YS
    Cho, SM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) : 1414 - 1419
  • [7] Electrical characterization of CVD TiN upper electrode for Ta2O5 capacitor
    Lee, MB
    Lee, HD
    Park, BL
    Chung, UI
    Koh, YB
    Lee, MY
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 683 - 686
  • [8] Electrochemical Behaviour of Ce Doped Ta2O5 Film Electrode
    Zhao, Yanhong
    Hou, Lichun
    Liu, Wenfei
    Tong, Wenming
    Liang, Sheng
    Sun, Min
    Wang, Xiaojing
    [J]. NEW AND ADVANCED MATERIALS, PTS 1 AND 2, 2011, 197-198 : 261 - 264
  • [9] AC IMPEDANCE INVESTIGATION OF TA2O5 FILM FOR USE AS A STORAGE CAPACITOR DIELECTRIC
    RESETIC, A
    METIKOSHUKOVIC, M
    [J]. THIN SOLID FILMS, 1992, 219 (1-2) : 176 - 182
  • [10] Liner-supported cylinder (LSC) technology to realize Ru/Ta2O5/Ru capacitor for future DRAMs
    Fukuzumi, Y
    Suzuki, T
    Sato, A
    Ishibashi, Y
    Hatada, A
    Nakamura, K
    Tsunoda, K
    Fukuda, M
    Lin, J
    Nakabayashi, M
    Minakata, H
    Shimada, A
    Kurahashi, T
    Tomita, H
    Matsunaga, D
    Hieda, K
    Hashimoto, K
    Nakamura, S
    Kohyama, SNY
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 793 - 796
12345