Ab initio calculations of excitons in GaN -: art. no. 035204

被引：52
|
作者：
Laskowski, R [1 ]
Christensen, NE
Santi, G
Ambrosch-Draxl, C
机构：
[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus, Denmark
[2] Graz Univ, Inst Phys, A-8010 Graz, Austria
来源：
PHYSICAL REVIEW B | 2005年 / 72卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.72.035204
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical absorption and excitonic properties of wurtzite GaN are investigated by means of an ab initio approach taking into account electron-hole correlations. This is done by solving the Bethe-Salpeter equation, using the results of density functional theory calculations as a starting point. Our main focus is the calculation of the binding energies of bound excitons, as well as their dependence on structural parameters and details of the electronic structure.
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页数：8
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