Tunnel FET device characteristics for RF energy harvesting passive rectifiers

被引：0
|
作者：
Cavalheiro, David [1 ]
Moll, Francesc [1 ]
Valtchev, Stanimir [2 ]
机构：
[1] Univ Politecn Cataluna, Dept Elect Engn, Barcelona, Spain
[2] Univ Nova Lisboa, FCT, Dept Elect Engn, Lisbon, Portugal
来源：
2015 IEEE 13TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | 2015年
关键词：
Doping; Energy Harvesting; Radio-Frequency; Rectifier; Tunnel FET; Ultra-Low Power;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-mu W power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.
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页数：4
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