Applications of heavy ion microprobe for single event effects analysis

被引：8

作者：

Reed, Robert A. ^{[1
]}

Vizkelethy, Gyorgy

Pellish, Jonathan A.

Sierawski, Brian

Warren, Kevin M.

Porter, Mark

Wilkinson, Jeff

Marshall, Paul W.

Niu, Guofu

Cressler, John D.

Schrimpf, Ronald D.

Tipton, Alan

Weller, Robert A.

机构：

[1] Vanderbilt Univ, Stevenson Ctr 5635, Nashville, TN 37235 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

[4] Medtron Microelect Ctr, Tempe, AZ 85281 USA

[5] Medtronic, CRDM Device Technol, Minneapolis, MN 55432 USA

[6] NASA Consultant, Brookneal, VA 24528 USA

[7] Auburn Univ, Auburn, AL 36894 USA

[8] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 261卷 / 1-2期

基金：

美国能源部;

关键词：

radiation effects in semiconductors; focused ion beam;

D O I：

10.1016/j.nimb.2007.04.163

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The motion of ionizing-radiation-induced rogue charge carriers in a semiconductor can create unwanted voltage and current conditions within a microelectronic circuit. If sufficient unwanted charge or current occurs on a sensitive node, a variety of single event effects (SEEs) can occur with consequences ranging from trivial to catastrophic. This paper describes the application of heavy ion microprobes to assist with calibration and validation of SEE modeling approaches. (c) 2007 Elsevier B. V. All rights reserved.

引用

页码：443 / 446

页数：4

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