A comprehensive bipolar avalanche multiplication compact model for circuit simulation

被引：14
|
作者：
Kloosterman, WJ [1 ]
Paasschens, JCJ [1 ]
Havens, RJ [1 ]
机构：
[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源：
PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2000年
关键词：
D O I：
10.1109/BIPOL.2000.886197
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a new comprehensive avalanche multiplication model is presented that takes into account the finite thickness of the epilayer, modulation of the electric field by the collector current (Kirk effect), current spreading in the epilayer and quasi-saturation. Two parameters are needed to model the collector voltage dependency at small current levels and one parameter to describe high current effects. The dependency of the collector-emitter breakdown voltage BVceo with collector current is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately.
引用
收藏
页码：172 / 175
页数：4
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