Fabrication of SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-Band XIMICs for 60GHz WPAN system

被引：0

作者：

Ahn, Hokyun ^{[1
]}

Lim, Jong-Won ^{[1
]}

Ji, Hong-Gu ^{[1
]}

Chang, Woo-Jin ^{[1
]}

Mun, Jae-Kyoung ^{[1
]}

Kim, Haecheon ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, IT Convergence & Components Lab, RF Circuit Grp, 161 Gajeong Dong, Taejon 305350, South Korea

来源：

HETEROGENEOUS INTEGRATION OF MATERIALS FOR PASSIVE COMPONENTS AND SMART SYSTEMS | 2007年 / 969卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the fabrication technology of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-band MMICs for high rate personal area network (WPAN) systems is described. The effect of the gate shape, such as the 1(st)-deck and the 2(nd)-deck gate head size, on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size are also presented. A 0.22um, the optimum, 1(st)-deck gate head size and 1(st) and 2(nd)-deck head size p-HEMT device with two finger gates of length 0.12um and 50um width showed an extrinsic transconductance of 529mS/mm and a threshold voltage of -1.19V. The cut-off frequency and the maximum frequency of oscillation were 94.7GHz and 189.1GHz, respectively. The gate dimensions of the p-HEMT device, for example the gate head size, are correlated to parasitic device capacitances, including C-gs, which effect the RF performance including the cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)).

引用

页码：87 / +

页数：2