Diamond thin film nucleation on silicon by ultrasonication in various mixtures

被引：12

作者：

Varga, M. ^{[1
]}

Vojs, M. ^{[1
]}

Marton, M. ^{[1
]}

Michalikova, L. ^{[1
]}

Vesely, M. ^{[1
]}

Redhammer, R. ^{[1
]}

Michalka, M. ^{[2
]}

机构：

[1] Slovak Tech Univ Bratislava, Fac Elect Engn & Informat Technol, Dept Microelect, Bratislava 81219, Slovakia

[2] Ctr Int Laser, Bratislava 84104, Slovakia

来源：

VACUUM | 2012年 / 86卷 / 06期

关键词：

Diamond; Nucleation; Ultrasonic abrasion; SEM; GROWTH;

D O I：

10.1016/j.vacuum.2011.07.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nucleation is a very important step in synthetic diamond thin film growth process and generally the incubation time for the stable diamond nuclei formation is very long. We can consider it to be a pretreatment of the Si substrate surface before diamond film deposition. In this study we have investigated the synthetic diamond thin film nucleation mainly on Si substrates by the ultrasonication in different mixtures of isopropanol, deionized water, n-methylpyrrolidon (NMP) or sodiumdodecylsulphate (SOS) containing nanosized diamond powder (<= 10 nm, Sigma Aldrich) and micro-or nanosized metals (Nickel, Cobalt, Yttrium). Liquids NMP and SDS have a special property to separate nanoparticles. (C) 2011 Elsevier Ltd. All rights reserved.

引用

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页码：681 / 683

页数：3

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