Effect of grain structure on the onset of diffusion-controlled stress relaxation in Pt thin films

被引:71
|
作者
Hyun, S [1 ]
Vinci, RP
Fahey, KP
Clemens, BM
机构
[1] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1615311
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermomechanical behavior of Pt thin films was studied using the substrate curvature technique. Films of identical thickness but different grain size were prepared by sputtering directly onto a thermally grown SiO2 layer on a (100) Si wafer. Predictions from a thin-film version of the deformation mechanism map model and the diffusional wedge are compared to the experimental results. The diffusional wedge model most accurately predicts the onset of diffusion-controlled stress relaxation in columnar Pt films. The use of an effective film thickness equal to the grain size improves the match to noncolumnar microstructures. (C) 2003 American Institute of Physics.
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页码:2769 / 2771
页数:3
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