A molecular dynamics simulation of cluster dissociation process under cluster ion implantation

被引：4
|
作者：
Hada, Y [1 ]
机构：
[1] Okayama Univ Sci, Grad Sch Sci, Okayama 7000005, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
lateral straggling; cluster dissociation; internal energy; molecular dynamics;
D O I：
10.1016/j.physb.2003.09.193
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Cluster ion implantation is a useful technique for manufacturing ultra-shallow-junction. In order to investigate the depth and lateral distribution as well as cluster dissociation, we performed a molecular dynamics simulation that injects 200-500 eV/atom boron cluster into single crystal silicon. The lateral spread will be an important problem at low implantation energies. With decreasing energy the lateral spread under cluster bombardment become significantly larger than for atom bombardment. The lateral distribution is also influenced by the orientation of the cluster with respect to the surface. Almost complete dissociation of the cluster was observed in all cases. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码：1036 / 1040
页数：5
相关论文
共 50 条
  • [1] Cluster ion implantation: a molecular dynamics study
    Ihara, S
    Itoh, S
    Greer, JC
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2000, 3 (1-2) : 91 - 95
  • [2] Molecular dynamics simulation of fullerene cluster ion impact
    Aoki, T
    Seki, T
    Tanomura, M
    Matsuo, J
    Insepov, Z
    Yamada, I
    [J]. ATOMISTIC MECHANISMS IN BEAM SYNTHESIS AND IRRADIATION OF MATERIALS, 1998, 504 : 81 - 86
  • [3] Molecular dynamics simulation of fluorine cluster ion impact
    Aoki, T
    Matsuo, J
    Yamada, I
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 164 : 546 - 552
  • [4] Molecular dynamics simulation on the dissolution process of Kaempferol cluster
    Zhang, Yuefei
    Wang, Na
    Zou, Lian
    Zhang, Mei
    Chi, Ruan
    [J]. JOURNAL OF MOLECULAR LIQUIDS, 2020, 304 (304)
  • [5] Cluster Ion Implantation for Process Application - Carbon Cluster co-Implantation
    Tanjyo, M.
    Nagayama, T.
    Onoda, H.
    Hamamoto, N.
    Umisedo, S.
    Koga, Y.
    Une, H.
    Maehara, N.
    Kawamura, Y.
    Hashino, Y.
    Nakashima, Y.
    Hashimoto, M.
    Tokoro, N.
    Nagai, N.
    Sekar, K.
    Krull, W.
    [J]. ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 105 - +
  • [6] Molecular dynamics simulations of cluster ion implantation for shallow junction formation
    Aoki, T
    Takaoka, JMG
    Yamada, I
    [J]. APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2001, 576 : 967 - 970
  • [7] Molecular dynamics simulation of damage formation by cluster ion impact
    Aoki, T
    Matsuo, J
    Insepov, Z
    Yamada, I
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4): : 49 - 52
  • [8] MOLECULAR-DYNAMICS SIMULATION OF CLUSTER-ION FRAGMENTATION
    WEINSTEIN, JD
    FISHER, RT
    VASANAWALA, S
    SHAPIRO, MH
    TOMBRELLO, TA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 88 (1-2): : 74 - 80
  • [9] Molecular dynamics simulation of damage formation by cluster ion impact
    Kyoto Univ, Kyoto, Japan
    [J]. Nucl Instrum Methods Phys Res Sect B, 1-4 (49-52):
  • [10] Molecular dynamics simulation of gas phase ion cluster formation
    Cabarcos, OM
    Lisy, JM
    [J]. INTERNATIONAL JOURNAL OF MASS SPECTROMETRY, 1999, 185 : 883 - 903
12345