Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

被引：33
|
作者：
Kim, Chang Oh [1 ]
Kim, Sung [1 ]
Oh, Hyoung Taek [1 ]
Choi, Suk-Ho [1 ]
Shon, Yoon [2 ]
Lee, Sejoon [2 ]
Hwang, Han Na [3 ]
Hwang, Chan-Cuk [3 ]
机构：
[1] Kyung Hee Univ, Inst Nat Sci, Dept Appl Phys, Coll Appl Sci, Yongin 446701, South Korea
[2] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
[3] Pohang Univ Sci & Technol, Beamline Res Div, Pohang Accelerator Lab, Pohang 790784, South Korea
来源：
PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 22期
关键词：
ZnO; Cu; Ferromagnetism; Doping type; Hole carriers;
D O I：
10.1016/j.physb.2010.08.061
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (n(cu)), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with n(cu) >= 1 mol% were obviously ferromagnetic, whilst the n-type samples with n(cu) <= 0.75 mol% exhibited paramagnetism. By increasing ncu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：4678 / 4681
页数：4
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