Atomistic simulation of point defects end diffusion in B2 NiAl

被引：42
|
作者：
Mishin, Y [1 ]
Farkas, D [1 ]
机构：
[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
来源：
SCRIPTA MATERIALIA | 1998年 / 39卷 / 4-5期
关键词：
D O I：
10.1016/S1359-6462(98)00206-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
[No abstract available]
引用
收藏
页码：625 / 630
页数：6
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