Calibration of polycrystalline silicon deposition and etching machine inside a technological simulator

Polycrystalline silicon layers are more and more involved in the new technologies like CMOS and BiCMOS transistors. However, actual commercial simulators are not able to model correctly the polysilicon layer deposition and its electrical behaviour. This study proposes a modeling of the in situ doped polysilicon deposition rate as a function of the physical parameters and which can be included in a commercial deposition simulator. (C) 1998 Elsevier Science B.V.