Growth and Investigation of Nd doped GdVO4 Single Crystals Grown by OFZ Technique

被引:6
|
作者
Soharab, M. [1 ]
Bhaumik, Indranil [1 ]
Bhatt, R. [1 ]
Saxena, A. [1 ]
Karnal, A. K. [1 ]
Gupta, P. K. [1 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Crystal Growth Lab, Laser Mat Dev & Devices Div, Indore 452013, Madhya Pradesh, India
来源
关键词
Single crystals; Laser host; Absorption coefficients; Photoluminescence; OPTICAL-PROPERTIES; ZONE;
D O I
10.1063/1.4980620
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Single crystals of Nd (0.6 at. %) doped GdVO4 were grown by optical floating zone technique with a typical dimension of similar to 5 mm in diameter and similar to 20-35 mm in length. The grown crystals were subjected to optical transmission and luminescence studies to investigate their absorption and emission characteristics. The absorption coefficient spectra depicted characteristic multiple Nd absorption peaks with highest absorption similar to 10 cm(-1) at 594 nm and 9.35 cm(-1) at 808 nm. The absorption coefficient at 880 nm is nearly half of absorption at 808 nm. The photoluminescence (PL) excitation spectra revealed higher emission at 1064 nm for 808 nm excitation wavelength. It was also observed that the PL emission at 1064 nm with 808 nm excitation is around two times stronger than the emission with 880 nm excitation.
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页数:3
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