Growth of PbTiO3 thin film on Si(100) with Y2O3 and CeO2 buffer layer

The PbTiO3 thin film was deposited on Si(100) with Y2O3 and CeO2 buffer layers. Y2O3, CeO2 and PbTiO3 layers were fabricated by the in-situ pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analysis revealed that the Y2O3 and CeO2 layers were (222) and (200) preferential orientation, respectively. PbTiO3 showed (100)+(001) mixed texture on CeO2/Si and polycrystalline on Y2O3/Si, respectively. Characterization of the grazing angle incident X-ray diffraction showed that the stress depth profile of the PbTiO3 thin film on CeO2/Si(100) was not uniform. The secondary ion mass spectroscopy (SIMS) analysis indicated that the CeO2 and Y2O3 layers reduced significantly the interdiffusion of Si atoms into PbTiO3 and that the distributions of Pb and Ti elements were uniform throughout the PbTiO3 layer. The columnar crystallization of CeO2, Y2O3, and PbTiO3 films were observed by scanned electron microscopy (SEM).