The kinetics of the (√3x√3)R30° sulfur lattice stripping from Au(111):: Competitive desorption-hole nucleation and growth model

被引:25
|
作者
Martin, H
Vericat, C
Andreasen, G
Creus, AH
Vela, ME
Salvarezza, RC
机构
[1] INIFTA, RA-1900 La Plata, Argentina
[2] Univ La Laguna, Dept Quim Fis, E-38207 La Laguna, Spain
关键词
D O I
10.1021/la0011174
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The stripping of the underpotential deposited (root 3x root3)R30 degrees sulfur lattice from Au(111) surfaces is studied by electrochemical techniques complemented with in situ scanning tunneling microscopy. The kinetics of the stripping process fits a model where adsorption/desorption competes with nucleation and growth of two-dimensional holes under charge transfer control. We propose that two phases compete for the electrode surface: a condensed phase consisting of holes nucleated at defects of the adsorbed layer and a diluted phase consisting of randomly distributed vacancies produced by desorption. The relative contribution of each process depends on the applied potential and the step density of the substrate.
引用
收藏
页码:2334 / 2339
页数:6
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