Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

被引：0
|
作者：
Gaillardin, M. [1 ]
Raine, M. [1 ]
Duhamel, O. [1 ]
Girard, S. [2 ]
Paillet, P. [1 ]
McMorrow, D. [3 ]
Warner, J. H. [3 ]
Andrieu, F. [4 ]
Barraud, S. [4 ]
Faynot, O. [4 ]
机构：
[1] CEA, DAM, DIF, F-91297 Arpajon, France
[2] Univ St Etienne, UMR CNRS 5516, Lab H Curien, F-42000 St Etienne, France
[3] US Navy, Res Lab, Washington, DC 20375 USA
[4] CEA, LETI Minatec, F-38000 Grenoble, France
来源：
2013 14TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2013年
关键词：
Single-Event Effects (SEE); Single-Event Transient (SET); charge collection; heavy ion; pulsed laser; mechanical stress; strained silicon; SOI; Fully Depleted (FD); SIGE HBTS; TRANSIENTS; DEPENDENCE; MODE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.
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页数：7
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