Three-dimensional topography simulation based on a level set method

被引：0
|
作者：
Sheikholeslami, A [1 ]
Heitzinger, C [1 ]
Badrieh, F [1 ]
Puchner, H [1 ]
Selberherr, S [1 ]
机构：
[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria
来源：
27TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, BOOKS 1-3, CONFERENCE PROCEEDINGS: MEETING THE CHALLENGES OF ELECTRONICS TECHNOLOGY PROGRESS | 2004年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a general three-dimensional topography simulator for the simulation of deposition and etching processes. The simulator is called ELSA (Enhanced Level Set Applications). ELSA is based on a level set method including narrow banding and a fast marching method. Modules for the transport of species, for surface reaction, and for the level set method are its basis.
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页码：263 / 265
页数：3
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