Photocurrent spectroscopy of an Fe/Zn0.96Fe0.04S schottky diode

被引：1
|
作者：
Li, B. K. [1 ]
Wang, C. [1 ]
Sou, I. K. [1 ]
Ge, W. K. [1 ]
Wang, J. N. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2007年 / 401卷
关键词：
surface or interfaces; group II-VI and compounds; anomalous photocurrent; Schottky barrier;
D O I：
10.1016/j.physb.2007.08.111
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Fe/Zn0.96Fe0.04S Schottky diode was grown by molecular beam epitaxy. The short-circuit DC photocurrent spectroscopy was measured at temperatures from 10 to 300 K. Anomalous photocurrent was observed at temperatures above 100 K when excitation photon energies were less than the band gap energy of Zn0.96Fe0.04S. We have explained this anomalous phenomenon based on the photo-ionization of acceptor-like interface states. We believe that these interface states are associated with some complex (Fe,S) defects formed at the Fe/ZnFeS interface. The transient behavior of photocurrent at various temperatures has also been studied. (C) 2007 Elsevier B.V. All rights reserved.
引用
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页码：48 / 50
页数：3
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