Screened Coulomb potential approach for the study of resonant impurity states in uniaxially deformed p-Ge

被引：1
|
作者：
Abramov, AA [1 ]
Akimov, VI [1 ]
Tulupenko, VN [1 ]
Firsov, DA [1 ]
Gavrilenko, VI [1 ]
Poroshin, VN [1 ]
机构：
[1] Donbass State Engn Acad, UA-84313 Kramatorsk, Ukraine
来源：
OPTICAL ORGANIC AND INORGANIC MATERIALS | 2001年 / 4415卷
关键词：
uniaxial deformation; valence subband; p-germanium; quasi-local states; resonant impurity scattering;
D O I：
10.1117/12.425496
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The pressure-dependent behavior of quasi local impurity states (QIS) induced by shallow impurity centers in uniaxially stressed p-Ge is described theoretically within screened Coulomb potential model. Dependences of energy position and broadening (lifetime) of QIS on pressure are calculated. They differ fundamentally from the results obtained within a short-range potential model. The wave functions of QIS are built. Perturbation of free hole wave function by the potential of a shallow acceptor is obtained analytically. Effective cross-section of impurity scattering of holes with QIS existing in valence band is calculated. Scattering ness-section dependence upon hole energy has a resonant character. The increase of pressure involves a decrease of cross-section values in the resonance region. Anisotropy of scattering cross-section is explained by anisotropy of free hole wave function perturbation in momentum space.
引用
收藏
页码：220 / 225
页数：6
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