Far-infrared photoresponse of the AlGaAs/GaAs low-dimensional electron systems constricted by split-gates

被引：2
|
作者：
Yamanaka, K
Hirakawa, K
机构：
[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 332, Japan
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1016/S0038-1101(97)00319-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the far-infrared photoresponse of a split-gate quantum point contact by Fourier transform infrared spectroscopy.It is found that there are two components in the measured photosignals; the photovoltaic component is attributed to the asymmetric electron heating due to the cyclotron absorption in the ungated region. The photoresistive component is attributed to the electron heating induced by inter-subband absorption at the constricted region. (C) 1998 Published by Elsevier Science Ltd. Ali rights reserved.
引用
收藏
页码：1151 / 1153
页数：3
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