Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence

被引：16

作者：

Pan, Chih-Hung ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Chen, Po-Hsun ^{[2
]}

Chang-Chien, Shi-Wang ^{[1
]}

Chen, Min-Chen ^{[2
]}

Huang, Hui-Chun ^{[1
]}

Wu, Huaqiang ^{[4
]}

Deng, Ning ^{[4
]}

Qian, He ^{[4
]}

Sze, Simon M. ^{[5
,6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, 70 Lien Hai Rd, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, 70 Lien Hai Rd, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 18期

关键词：

INDIUM-TIN-OXIDE; TFT-LCD PANEL; HIGH-PERFORMANCE; THIN-FILM; GALLIUM OXIDE; RRAM DEVICES; ITO; OXYGEN; COMPLEMENTARY; IMPROVEMENT;

D O I：

10.1063/1.4966181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, an ITO/Ga2O3: ITO/TiN structured resistance random access memory is introduced. Either interface or filament conduction mechanism can be induced depending on the forming compliance current, which has not been investigated before. Material analyses and electrical I-V measurements on this ITO/Ga2O3: ITO/TiN have also been carried out. The interface conduction mechanism was confirmed by a size-effect experiment, where resistance varied inversely to via size. In addition, the current fitting results show that Schottky emission dominates the on-and off-state currents. All physical mechanisms of device resistive switching behaviors are explained by our models and also confirmed by I-V characteristics. Published by AIP Publishing.

引用

页数：5