History dependent magnetoresistance in lightly doped La2-XSrXCuO4 thin films

被引：1

作者：

Shi, Xiaoyan ^{[1
,2
]}

Popovic, Dragana ^{[1
,2
]}

Panagopoulos, C. ^{[3
,4
,5
]}

Logvenov, G. ^{[6
]}

Bollinger, A. T. ^{[6
]}

Bozovic, I. ^{[6
]}

机构：

[1] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[2] Florida State Univ, Dept Phys, Tallahassee, FL 32310 USA

[3] Univ Crete, Dept Phys, GR-71003 Iraklion, Greece

[4] FORTH, GR-71003 Iraklion, Greece

[5] Nanyang Technol Univ, Div Phys & Appl Phys, Singapore, Singapore

[6] Brookhaven Natl Lab, Upton, NY 11973 USA

来源：

PHYSICA B-CONDENSED MATTER | 2012年 / 407卷 / 11期

基金：

美国国家科学基金会;

关键词：

Cuprates; Thin films; Magnetotransport; Charge dynamics; SPIN-GLASS; ANTIFERROMAGNETIC ORDER; SINGLE-CRYSTALS; TRANSITION; PHASE; SUPERCONDUCTORS; LA2-XSR(X)CUO4; TRANSPORT; LA2CUO4; OXIDES;

D O I：

10.1016/j.physb.2012.01.063

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The in-plane magnetoresistance (MR) in atomically smooth La2-xSrxCuO4 thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at T < 4 K. The positive MR exhibits glassy features, inclding history dependence and memory, for all orientations of B. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state. (C) Elsevier B.V. All rights reserved.

引用

页码：1915 / 1918

页数：4

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