Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

被引:4
|
作者
Jiang, Ye [1 ]
Shen, Honglie [1 ]
Yang, Wangyang [1 ]
Zheng, Chaofan [1 ]
Tang, Quntao [1 ]
Yao, Hanyu [1 ]
Raza, Adil [1 ]
Li, Yufang [1 ]
Huang, Chunlai [2 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, 29 Yudao St, Nanjing 210016, Jiangsu, Peoples R China
[2] Jiangsu GCL Silicon Mat Technol Dev Co Ltd, Key Lab Silicon Based Elect Mat Jiangsu Prov, 88 Yangshan Rd, Xuzhou 221000, Peoples R China
来源
关键词
SOLAR-CELLS; BLACK-SILICON; SURFACE PASSIVATION; RECOMBINATION; DEPOSITION; FILMS; LAYER;
D O I
10.1007/s00339-017-1542-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)(3) for Al2O3 films were chosen for comparison. Al2O3/SiOx stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)(3)), and the effective carrier lifetime could reach 7.84 and 16.98 mu s, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.
引用
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页数:7
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