In situ TEM study of electron beam stimulated organization of three-dimensional void superlattice in CAF2

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作者
Ding, TH [1 ]
Zhu, S [1 ]
Wang, LM [1 ]
机构
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
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T [工业技术];
学科分类号
08 ;
摘要
CaF2 is widely adopted as deep-UV window material and thin film optical coating. It has been known that ordered defect superlattices may form in electron irradiated CaF2. [1] However, the nature of the defects on the superlattice point (i.e., Ca colloids or voids) has not been certain and the self-organization mechanism has not been fully understood. In this study, single crystal CaF2 were irradiated under 200 keV electron beam at room temperature with in situ TEM observation of the dynamic process of defect ordering. The superlattice reached steady state after an electron dose of 1 x 10(21)e(-)/cm(2) with void radius about 5 nm. Videos recorded during the in-situ observation reveal the dynamic self-organization process of the void superlattice. Coalescence was prevalent at the initial stages. Migration and preferential growth were dominant at the final stages of the superlattice formation. At a dose higher than 3 x 10(21)e(-)/cm(2) the superlattice structure was destroyed. These critical doses of void superlattice formation and deformation seem to be independent of dose rate. The anisotropic diffusivity of the migrating "molecules" may explain the superlattice formation.
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页码:19 / 25
页数:7
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共 40 条
  • [1] Void superlattice formation in electron irradiated CaF2: Theoretical analysis
    Kuzovkov, V. N.
    Kotomin, E. A.
    Merzlyakov, P.
    Zvejnieks, G.
    Li, K. D.
    Ding, T. H.
    Wang, L. M.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 3055 - 3058
  • [2] ANION VOIDAGE AND THE VOID SUPERLATTICE IN ELECTRON-IRRADIATED CAF2
    JOHNSON, E
    CHADDERTON, LT
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 79 (1-4): : 183 - 233
  • [3] Three-dimensional simulation study on the electron beam lithography
    Song, Hui-Ying
    Yang, Rui
    Zhao, Zhen-Yu
    [J]. Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2010, 38 (03): : 617 - 619
  • [4] Stimulated scattering of electromagnetic waves by a relativistic electron beam in a three-dimensional geometry
    Karimov, AR
    Poponin, VP
    Rukhadze, AA
    Shcheglov, VA
    [J]. QUANTUM ELECTRONICS, 1999, 29 (05) : 400 - 405
  • [5] Three-Dimensional in Situ Electron-Beam Lithography Using Water Ice
    Hong, Yu
    Zhao, Ding
    Liu, Dongli
    Ma, Binze
    Yao, Guangnan
    Li, Qiang
    Han, Anpan
    Qiu, Min
    [J]. NANO LETTERS, 2018, 18 (08) : 5036 - 5041
  • [6] ELECTRON BEAM-INDUCED DECOMPOSITION OF MBE GROWN CAF2 FILMS - AN AES STUDY
    BAUNACK, S
    ZEHE, A
    [J]. VACUUM, 1990, 41 (4-6) : 1003 - 1005
  • [7] In situ optical observation and control of initial stages of GaAs growth on CaF2 surface modified by electron beam irradiation
    Kawasaki, K
    Tsutsui, K
    [J]. CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 101 - 106
  • [8] An advanced three-dimensional RHEED mapping approach to the diffraction study of Co/MnF2/CaF2/Si(001) epitaxial heterostructures
    Suturin, S. M.
    Korovin, A. M.
    Fedorov, V. V.
    Valkovsky, G. A.
    Tabuchi, M.
    Sokolov, N. S.
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2016, 49 : 1532 - 1543
  • [9] Carbon-Stimulated Self-Organization of Ge Nanoislands during Molecular Beam Epitaxy of Ge/CaF2/Si(111) Heterostructures
    Sokolov, L. V.
    Deryabin, A. S.
    Rodyakina, E. E.
    [J]. OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2009, 45 (04) : 328 - 331
  • [10] Carbon-stimulated self-organization of Ge nanoislands during molecular beam epitaxy of Ge/CaF2/Si(111) heterostructures
    L. V. Sokolov
    A. S. Deryabin
    E. E. Rodyakina
    [J]. Optoelectronics, Instrumentation and Data Processing, 2009, 45 (4) : 328 - 331