Robust Gap less Surface State and Rashba-Splitting Bands upon Surface Deposition of Magnetic Cr on Bi2Se3

被引:35
|
作者
Wang, Eryin [1 ,2 ]
Tang, Peizhe [1 ,2 ]
Wan, Guoliang [1 ,2 ]
Fedorov, Alexei V. [3 ]
Miotkowski, Ireneusz [4 ]
Chen, Yong P. [4 ,5 ,6 ]
Duan, Wenhui [1 ,2 ,7 ,8 ]
Zhou, Shuyun [1 ,2 ,8 ]
机构
[1] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[4] Purdue Univ, Dept Phys & Astron, W Lafayette, IN 47907 USA
[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[6] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[7] Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
[8] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
topological insulator; time-reversal symmetry; ferromagnetism; angle-resolved photoemission spectroscopy (ARPES); TRANSITION; ANISOTROPY;
D O I
10.1021/nl504900s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interaction between magnetic impurities and the gapless surface state is of Critical importance for realizing novel quantum phenomena and new functionalities. in topological insulators. By combining angle-resolved photoemission-spectroscopic experiments with density functional theory calculations; we show that surface deposition of Cr atoms on Bi2Se3 does not lead to gap opening of the surface state at the Dirac point, indicating the absence :Of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping; and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.
引用
收藏
页码:2031 / 2036
页数:6
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