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Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point
被引:7
|作者:
Iwasaki, Takuya
[1
]
Morita, Yoshifumi
[2
]
Watanabe, Kenji
[3
]
Taniguchi, Takashi
[1
]
机构:
[1] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Gunma Univ, Fac Engn, Kiryu, Gunma 3768515, Japan
[3] NIMS, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
基金:
日本学术振兴会;
关键词:
QUANTUM HALL FERROMAGNETISM;
BROKEN-SYMMETRY STATES;
BILAYER;
BANDGAP;
D O I:
10.1103/PhysRevB.106.165134
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.
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页数:6
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