Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point

被引:7
|
作者
Iwasaki, Takuya [1 ]
Morita, Yoshifumi [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [1 ]
机构
[1] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[2] Gunma Univ, Fac Engn, Kiryu, Gunma 3768515, Japan
[3] NIMS, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
基金
日本学术振兴会;
关键词
QUANTUM HALL FERROMAGNETISM; BROKEN-SYMMETRY STATES; BILAYER; BANDGAP;
D O I
10.1103/PhysRevB.106.165134
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on transport properties in dual-gated hexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. Here, BLG is nontwisted, i.e., plain. This paper focuses on the charge neutrality point (CNP) for a plain BLG. Under a perpendicular magnetic field, transitions between two insulating phases at the CNP are detected by varying a displacement field with the study on the resistance-temperature characteristics and the magnetoresistance. This work opens avenues for exploring the global phase diagram of the hBN/BLG superlattices beyond the CNP.
引用
收藏
页数:6
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