Fabrication of Nanostructured Al-doped ZnO Thin Film for Methane Sensing Applications

被引：0

作者：

Shafura, A. K. ^{[1
]}

Sin, N. D. Md ^{[1
,2
]}

Azhar, N. E. I. ^{[1
]}

Saurdi, I. ^{[1
,3
]}

Uzer, M. ^{[1
]}

Mamat, M. H. ^{[1
]}

Shuhaimi, A. ^{[4
]}

Alrokayan, Salman A. H. ^{[5
]}

Khan, Haseeb A. ^{[5
]}

Rusop, M. ^{[1
,6
]}

机构：

[1] Univ Teknol MARA, Fac Elect Engn, NANOElect Ctr NET, Shah Alam 40450, Selangor, Malaysia

[2] Univ Teknol MARA Cawangan Johor, Fac Elect Engn, Kampus Pasir Gudang, Masai 81750, Johor, Malaysia

[3] Univ Teknol MARA Sarawak, Fac Elect Engn, Kampus Kota Samarahan,Jalan Meranek, Sarawak, Malaysia

[4] Univ Malaya, Fac Sci, Dept Phys, Dimens Mat Res Ctr LDMRC, Kuala Lumpur 50603, Malaysia

[5] King Saud Univ, Dept Biochem, Coll Sci, Res Chair Targeting & Treatment Canc Using Nanopa, PO 2454, Riyadh 11451, Saudi Arabia

[6] Univ Teknol MARA, Inst Sci, NANOSciTech Ctr NST, Shah Alam 40450, Selangor, Malaysia

来源：

INTERNATIONAL CONFERENCE ON NANO-ELECTRONIC TECHNOLOGY DEVICES AND MATERIALS (IC-NET 2015) | 2016年 / 1733卷

关键词：

Methane sensor; nanostructure; Al-doped ZnO; SOL-GEL; OPTICAL-PROPERTIES;

D O I：

10.1063/1.4948883

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

CH4 gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500 degrees C which has conductivity and sensitivity value of 3.3 x 10(-3) S/cm and 11.5%, respectively.

引用

页数：5

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