Ab initio study of electronic density of state and photoabsorption of Ga1-xMnxAs under pressure

被引：5

作者：

Pluengphon, Prayoonsak ^{[1
]}

Bovornratanaraks, Thiti ^{[2
,3
]}

Vannarat, Sornthep ^{[4
]}

Pinsook, Udomsilp ^{[2
,3
]}

机构：

[1] Huachiew Chalermprakiet Univ, Fac Sci & Technol, Div Phys Sci, Samut Prakan 10540, Thailand

[2] Chulalongkorn Univ, Fac Sci, Dept Phys, Extreme Condit Phys Res Lab, Bangkok 10330, Thailand

[3] CHE, ThEP Ctr, Bangkok 10400, Thailand

[4] Natl Elect & Comp Technol Ctr, Large Scale Simulat Res Lab, Pathum Thani 12120, Thailand

来源：

SOLID STATE COMMUNICATIONS | 2015年 / 202卷

关键词：

GENERALIZED GRADIENT APPROXIMATION; FERROMAGNETIC SEMICONDUCTORS; MOLECULAR-DYNAMICS; OPTICAL-PROPERTIES; PHASE-TRANSITIONS; III-V; GAAS; EXCHANGE; MN)AS; (GA;

D O I：

10.1016/j.ssc.2014.10.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ab initio calculation based on density functional theory was performed for studying high-pressure effects on the electronic properties and photoabsorption of Ga1-xMnxAs. Mn atom was substituted into the varied GaAs super cells, which observed the Mn concentrations at 3.70%, 8.33% and 12.50%. In zinc blende phase of Ga1-xMnxAs, we found that the effects of Mn on GaAs in the pressure range 0-10 GPa are the reducing of band gap, generating of impurity peak and increasing of photoabsorption coefficient. The impurity peaks in Ga1-xMnxAs decrease under pressure increasing because the carriers were excited to conduction band by the effect of bond lengths reducing. The tendency of absorption coefficient of Ga1-xMnxAs in range of light-wavelength depends on size of impurity peak. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：19 / 23

页数：5

共 50 条

[31] Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning
Hatfield, SA
Veal, TD
McConville, CF
Bell, GR
Edmonds, KW
Campion, RP
Foxon, CT
Gallagher, BL
SURFACE SCIENCE, 2005, 585 (1-2) : 66 - 74
[32] Large-scale monte carlo study of a realistic lattice model for Ga1-xMnxAs
Yildirim, Yucel
Alvarez, Gonzalo
Moreo, Adriana
Dagotto, Elbio
PHYSICAL REVIEW LETTERS, 2007, 99 (05)
[33] First-principles study of the formation of defects in the diluted magnetic semiconductor Ga1-xMnxAs
Kim, MS
Park, CH
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (02) : 536 - 540
[34] Electronic and magnetic properties of Ga1-xMnxAs:: Role of Mn defect bands -: art. no. 035207
Zhao, YJ
Geng, WT
Park, KT
Freeman, AJ
PHYSICAL REVIEW B, 2001, 64 (03)
[35] Electronic states in Ga1-xMnxAs:: Substitutional versus interstitial position of Mn -: art. no. 235209
Máca, F
Masek, J
PHYSICAL REVIEW B, 2002, 65 (23) : 1 - 6
[36] Skutterudites under pressure: An ab initio study
Ram, Swetarekha
Kanchana, V.
Valsakumar, M. C.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (09)
[37] Skutterudites under pressure: An ab initio study
Kanchana, V. (kanchana@iith.ac.in), 1600, American Institute of Physics Inc. (115):
[38] Ab initio study of BAs under pressure
Herrera-Cabrera, MJ
Rodríguez-Hernández, P
Muñoz, A
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2003, 235 (02): : 446 - 451
[39] Mn 3d partial density of states in Ga1-xMnxAs studied by resonant photoemission spectroscopy
Okabayashi, J
Kimura, A
Mizokawa, T
Fujimori, A
Hayashi, T
Tanaka, M
PHYSICAL REVIEW B, 1999, 59 (04) : R2486 - R2489
[40] Ferromagnetic resonance study of ultra-thin Ga1-xMnxAs films as a function of layer thickness
Zhou, Y. Y.
Cho, Y. J.
Ge, Z.
Liu, X.
Dobrowolska, M.
Furdyna, J. K.
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1213 - +

← 1 2 3 4 5 →