Room temperature operation of GaxIn1-xP/Ga0.47In0.53As resonant tunneling diodes

被引：3
|
作者：
Cohen, GM [1 ]
Ritter, D [1 ]
机构：
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 188卷 / 1-4期
关键词：
GaInP on InP; GaInP/InGaAs resonant tunneling diode; RTD; room temperature negative-resistance; aluminum free devices; MOMBE;
D O I：
10.1016/S0022-0248(98)00100-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Room temperature operation of GaInP/GaInAs/InP resonant tunneling diodes on InP substrates was demonstrated. The diodes exhibited high peak current densities and useful peak-to-valley current ratios. Their performance was comparable to that of similar GaInAs/AlInAs devices. The thickness and composition of the GaInP barriers was obtained from high-resolution X-ray diffraction measurements. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：359 / 362
页数：4
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