Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 μm wavelength region) by selective-area growth

被引：14

作者：

Zhou, D. ^{[1
]}

Anantathanasarn, S. ^{[1
]}

van Veldhoven, P. J. ^{[1
]}

van Otten, F. W. M. ^{[1
]}

Eijkemans, T. J. ^{[1
]}

de Vries, T. ^{[1
]}

Smalbrugge, E. ^{[1
]}

Notzel, R. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Res Inst, COBRA Inter, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期

关键词：

D O I：

10.1063/1.2790378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100) pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaks are observed from individual and single QDs with wavelength tuned into the 1.55 mu m telecom region by insertion of ultrathin GaAs interlayers beneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passive integration for efficient microcavity QD nanolasers and single photon sources. (C) 2007 American Institute of Physics.

引用

页数：3

共 14 条

[1] Lateral wavelength control of InAs/InGaAsP/InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy
Zhou, D.
Anantathanasarn, S.
van Veldhoven, P. J.
van Otten, F. W. M.
Eijkemans, T. J.
de Vries, T.
Smalbrugge, E.
Notzel, R.
JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
[2] Wavelength tunable InAs/InP(100) quantum dots in 1.55-μm telecom devices
Anantathanasarn, S.
Barbarin, Y.
Cade, N. I.
van Veldhoven, P. J.
Bente, E. A. J. M.
Oei, Y. S.
Kamada, H.
Smit, M. K.
Notzel, R.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2008, 147 (2-3): : 124 - 130
[3] InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers
Gong, Q
Nötzel, R
van Veldhoven, PJ
Eijkemans, TJ
Wolter, JH
APPLIED PHYSICS LETTERS, 2004, 85 (08) : 1404 - 1406
[4] Stacking, polarization control, and lasing (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots
Anantathanasarn, S.
Notzel, R.
van Veldhoven, P. J.
van Otten, F. W. M.
Eijkemans, T. J.
Barbarin, Y.
de Vries, T.
Smalbrugge, E.
Geluk, E. J.
Bente, Eatm.
Oei, Y. S.
Smit, M. K.
Wolter, J. H.
JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) : 553 - 557
[5] 1.55-μm InAs Quantum Dot Number and Size Control on Truncated InP Pyramids and Integration by Selective Area Epitaxy
Wang, Hao
Yuan, Jiayue
van Veldhoven, Peter J.
Notzel, Richard
QUANTUM DOTS AND NANOSTRUCTURES: SYNTHESIS, CHARACTERIZATION, AND MODELING VII, 2010, 7610
[6] InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting ultrathin GaAs and GaP interlayers
Gong, Q
Nötzel, R
van Veldhoven, PJ
Wolter, JH
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 67 - 71
[7] Stacking and polarization control of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP(100) quantum dots -: art. no. 063105
Anantathanasarn, S
Nötzel, R
van Veldhoven, PJ
van Otten, FWM
Eijkemans, TJ
Wolter, JH
APPLIED PHYSICS LETTERS, 2006, 88 (06)
[8] High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
Sichkovskyi, V. I.
Waniczek, M.
Reithmaier, J. P.
APPLIED PHYSICS LETTERS, 2013, 102 (22)
[9] Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy
Anantathanasarn, S.
Notzel, R.
van Veldhoven, P. J.
van Otten, F. W. M.
Barbarin, Y.
Servanton, G.
de Vries, T.
Smalbrugge, E.
Geluk, E. J.
Eijkemans, T. J.
Bente, E. A. J. M.
Oei, Y. S.
Smit, M. K.
Wolter, J. H.
APPLIED PHYSICS LETTERS, 2006, 89 (07)
[10] Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region -: art. no. 173109
Bogaart, EW
Nötzel, R
Gong, Q
Haverkort, JEM
Wolter, JH
APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3

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