Monte Carlo study of Si(111) homoepitaxy

被引：6
|
作者：
Itoh, M [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
来源：
PHYSICAL REVIEW B | 1998年 / 57卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.57.14623
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An attempt is made to simulate the homoepitaxial growth of a Si(lll) surface by the kinetic Monte Carlo method in which the standard solid-on-solid model and the planar model of the (7X7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a cooperative stacking transformation is necessary for a layer growth.
引用
收藏
页码：14623 / 14626
页数：4
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