High isolation X-band MEMS capacitive switches

被引:18
|
作者
Tang, M
Yu, AB
Liu, AQ
Agarwal, A
Aditya, S
Liu, ZS
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
[3] Inst High Performance Comp, Singapore 117528, Singapore
关键词
MEMS capacitive switch; RIF MEMS; bulk micromachining;
D O I
10.1016/j.sna.2004.11.026
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and optimization of the X-band microelectromechanical system (MEMS) capacitive switch using an electrical model and a mechanical model. The electrical model can accurately extract the resistance, capacitance and inductance of the switch. Based on the electrical model, a single-bridge switch and double-bridge switch with serpentine folded suspensions are proposed to achieve higher isolation compared to a typical MEMS capacitive switch at X-band frequencies. The measurement results show an isolation of 16.5-28 dB for single-bridge switch and 25-35 dB for double-bridge switch, both at 10-13 GHz. The mechanical performance is measured using an optoelectronic laser interferometric system. Due to the low effective spring constant of the serpentine folded suspensions, only 20.4 V of pull-down voltage is required. An improved fabrication process using surface and bulk micromachining techniques is also described. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:241 / 248
页数:8
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