Effect of nitrogen doping and external electric field on the adsorption of hydrogen on graphene

被引:5
|
作者
Wu, Shiyun [1 ]
Fan, Kaimin [1 ]
Wu, Minpin [2 ]
Yin, Guangqiang [2 ]
机构
[1] Sichuan Univ Arts & Sci, Sch Phys & Mechtron Engn, Dazhou 635000, Peoples R China
[2] Univ Elect Sci & Technol China, Joint Lab Police Equipment, Chengdu 610054, Peoples R China
来源
关键词
STORAGE MATERIALS; DOPED GRAPHENE; SINGLE-LAYER; STABILITY; DEFECTS; SHEET; H-2;
D O I
10.1051/epjap/2016160059
中图分类号
O59 [应用物理学];
学科分类号
摘要
Effect of doping and external electric field on the adsorption of hydrogen on graphene was studied by using density functional theory. Substitutional nitrogen, pyridinic and pyrrolic nitrogen doping has been considered. It was found that hydrogen prefers to be physically adsorbed on the pristine and substitutional nitrogen doped graphene, whereas hydrogen prefers to be chemically adsorbed on the pyridinic and pyrrolic nitrogen doped graphene. An external electric field can enhance the chemical adsorption of hydrogen on the pyridinic and pyrrolic N-doped graphene. These demonstrate nitrogen doping combined with external electric field can increase the capacity of hydrogen storage in graphene.
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页数:6
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