Neutralized (NH4)2S solution passivation of III-V phosphide surfaces

被引：32
|
作者：
Yuan, ZL [1 ]
Ding, XM
Lai, B
Hou, XY
Lu, ED
Xu, PS
Zhang, XY
机构：
[1] Fudan Univ, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China
[2] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期
关键词：
D O I：
10.1063/1.122649
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Synchrotron radiation photoelectron spectroscopy has been used to investigate III-V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)(2)S solution. Compared to the conventional basic (NH4)(2)S solution treatment, a thick sulfide layer with P-S bond and strong Ga- S (In-S) bond of high thermal stability is formed on the neutralized (NH4)(2)S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)(2)S solutions to III-V phosphide surfaces are also discussed. (C) 1998 American Institute of Physics. [S0003-6951(98)02946-5].
引用
收藏
页码：2977 / 2979
页数：3
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