Time-resolved two-dimensional profiles of electron density and temperature of laser-produced tin plasmas for extreme-ultraviolet lithography light sources

Time-resolved two-dimensional (2D) profiles of electron density (n(e)) and electron temperature (T-e) of extreme ultraviolet (EUV) lithography light source plasmas were obtained from the ion components of collective Thomson scattering (CTS) spectra. The highest EUV conversion efficiency (CE) of 4% from double pulse lasers irradiating a Sn droplet was obtained by changing their delay time. The 2D-CTS results clarified that for the highest CE condition, a hollow-like density profile was formed, i.e., the high density region existed not on the central axis but in a part with a certain radius. The 2D profile of the in-band EUV emissivity (eta(EUV)) was theoretically calculated using the CTS results and atomic model (Hullac code), which reproduced a directly measured EUV image reasonably well. The CTS results strongly indicated the necessity of optimizing 2D plasma profiles to improve the CE in the future.