Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4

被引：0

作者：

Miranda, JM ^{[1
]}

Vogt, A

Schussler, M

Shaalan, M

Matulionis, A

Sebastian, JL

Hartnagel, HL

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Aplicada 3, Madrid 28040, Spain

[2] TU Darmstadt, Inst Hochfrequenztech, Fachbereich 18, D-64283 Darmstadt, Germany

[3] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 07期

关键词：

D O I：

10.1088/0268-1242/13/7/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).

引用

页码：833 / 836

页数：4

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