Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate

被引：61
|
作者：
Dawber, M [1 ]
Scott, JF
Hartmann, AJ
机构：
[1] Univ Cambridge, Dept Earth Sci, Symetrix Ctr Ferro, Cambridge CB2 3EQ, England
[2] Univ New S Wales, Surface Sci Lab, Sydney, NSW 2052, Australia
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2001年 / 21卷 / 10-11期
关键词：
BaTiO3 and titanates; electrical conductivity; electrical properties;
D O I：
10.1016/S0955-2219(01)00081-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper discusses the effect of donors and acceptors on the electronic band structure and defect properties of Ba0.7Sr0.3TiO3 film (BST). Based on X-Ray Photoelectron Spectroscopy (XPS) data and an extension of previous work by Robertson and Chen (Robertson, J. and Chen, C. W., Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate. Appl. Phys. Lett., 1999, 74, 1168-1170), Schottky barrier heights are calculated for BST films in which La and Mn dopants have been added (0.7%). The barrier height expression of Cowley and Sze (Cowley, A. M. and Sze, S. M., Journal of Applied Physics, 1965, 36, 3212) is discussed with attention to the term neglected in their original paper. The effect of dopants on the oxygen vacancy concentration is also discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1633 / 1636
页数：4
相关论文
共 50 条
  • [1] Effect of acceptor and donor dopants on the dielectric and tunable properties of barium strontium titanate
    Liang, XF
    Meng, ZY
    Wu, WB
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (12) : 2218 - 2222
  • [2] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
    Robertson, J
    Chen, CW
    APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1168 - 1170
  • [3] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate
    Robertson, J
    Chen, CW
    FERROELECTRIC THIN FILMS VII, 1999, 541 : 443 - 448
  • [4] Effect of donor and acceptor dopants on crystallization, microstructural and dielectric behaviors of barium strontium titanate glass ceramics
    Yadav, Avadhesh Kumar
    Gautam, C. R.
    Singh, Prabhakar
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 672 : 52 - 58
  • [5] Effect of Donor and Acceptor Dopants on the Microstructure and Dielectric Properties of Barium Titanate Based Ceramics
    Paunovic, Vesna
    Prijic, Zoran
    Mitic, Vojislav V.
    SCIENCE OF SINTERING, 2022, 54 (01) : 81 - 91
  • [6] The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)
    Slouka, Christoph
    Kainz, Theresa
    Navickas, Edvinas
    Walch, Gregor
    Hutter, Herbert
    Reichmann, Klaus
    Fleig, Juergen
    MATERIALS, 2016, 9 (11)
  • [7] The Impact of Acceptor Dopant Magnesium and Oxygen Vacancy Defects on the Lattice of Barium Strontium Titanate
    Saal, J.
    Andelm, J.
    Nothwang, W. D.
    Cole, M. W.
    INTEGRATED FERROELECTRICS, 2008, 101 : 142 - 151
  • [8] Effect of dopants on the band structure of barium strontium titanate thin films
    Zheng, YB
    Wang, SJ
    Huan, CHA
    MICRO- AND NANOSYSTEMS-MATERIALS AND DEVICES, 2005, 872 : 291 - 295
  • [9] Donor-acceptor joint effect in barium titanate systems
    Petrovic, M. M. Vijatovic
    Bobic, J. D.
    Grigalaitis, R.
    Ilic, N. J.
    Dzunuzovic, A. S.
    Jankauskaite, V.
    Banys, J.
    Stojanovic, B. D.
    CERAMICS INTERNATIONAL, 2015, 41 (09) : 11365 - 11371
  • [10] THE EFFECT OF VARIOUS DOPANTS ON THE DIELECTRIC-PROPERTIES OF BARIUM STRONTIUM-TITANATE
    HERNER, SB
    SELMI, FA
    VARADAN, VV
    VARADAN, VK
    MATERIALS LETTERS, 1993, 15 (5-6) : 317 - 324
12345